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00000cam a2200000 7i4500 |
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19981118.0 |
| 008 |
981118s1995 |
| 090 |
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|a D621.3815
|b ASB
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| 100 |
1 |
0 |
|a ASBAN bin Dolah
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| 245 |
1 |
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|a Wafer processing and prosess development of 1 Nm CMOS:oxidation (Pemindahan Teknologi dari Frunhofer Institute,Dresden,Germany)8.3.1995-3.6.1995
|c Asban b Dolah.
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| 260 |
0 |
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|a Dresden :
|b Fraunhofer Institute ,
|c 1995
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| 300 |
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|a 20v.p. ;
|c 29cm.
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| 500 |
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|a Course report
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| 650 |
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|a Integrated circuits-wafer-scale integration-Dissertations,thesis,etc.
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| 650 |
0 |
0 |
|a Oxidation-Dissertations,thesis,etc.
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| 999 |
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|a D000002184
|b THESIS AND DISSERTATIONS
|c REFERENCE
|e Default branch
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