Influence of Polysilikon Gate Depletion on the Subthreshold Behavior of Submicron Mosfets (P-MOSFET)

Bibliographic Details
Main Author: KHAIRUNNISA Hasikin
Format: Thesis Book
Published: Kuala Lumpur : Universiti Malaya , May 2007
Subjects:

MARC

LEADER 00000cam a2200000 7i4500
001 0000023369
005 20070621.0
008 070621s2007
100 1 0 |a KHAIRUNNISA Hasikin 
245 1 0 |a Influence of Polysilikon Gate Depletion on the Subthreshold Behavior of Submicron Mosfets (P-MOSFET)   |c Khairunnisa Hasikin 
260 0 0 |a Kuala Lumpur :   |b Universiti Malaya ,   |c May 2007 
300 |a xvii,135p., :   |b ill., ;   |c 29cm. 
502 0 0 |a Thesis (Bachelor of Engineering)-Universiti Malaya, May 2007 
610 2 0 |a Universiti Malaya   |x Dissertation 
999 |a D000008444   |b THESIS AND DISSERTATIONS   |c REFERENCE   |e Default branch