Significance of post oxidation annelaing (POA) and post metallization annealing (PMA) on the capacitance-voltage characterization of Si3N4 MOS capacitor
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| Format: | Book |
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Bangi :
Universiti Kebangsaan Malaysia ,
2004
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HEADQUARTERS
| Accession | Item Category | Format | Status | Notes |
|---|
| D000005260 | REFERENCE | THESIS AND DISSERTATIONS | AVAILABLE |