APA (7th ed.) Citation

ROSMINAZUIN binti Ab Rahim. (2004). Significance of post oxidation annelaing (POA) and post metallization annealing (PMA) on the capacitance-voltage characterization of Si3N4 MOS capacitor. Universiti Kebangsaan Malaysia.

Chicago Style (17th ed.) Citation

ROSMINAZUIN binti Ab Rahim. Significance of Post Oxidation Annelaing (POA) and Post Metallization Annealing (PMA) on the Capacitance-voltage Characterization of Si3N4 MOS Capacitor. Bangi: Universiti Kebangsaan Malaysia, 2004.

MLA (9th ed.) Citation

ROSMINAZUIN binti Ab Rahim. Significance of Post Oxidation Annelaing (POA) and Post Metallization Annealing (PMA) on the Capacitance-voltage Characterization of Si3N4 MOS Capacitor. Universiti Kebangsaan Malaysia, 2004.