Significance of post oxidation annelaing (POA) and post metallization annealing (PMA) on the capacitance-voltage characterization of Si3N4 MOS capacitor
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| Format: | Book |
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Bangi :
Universiti Kebangsaan Malaysia ,
2004
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| Item Description: | Thesis(M.Sc in Microelectronics)-UKM,2004 |
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| Physical Description: | xiv,53p. ; 30cm. |