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00000cam a2200000 7i4500 |
| 001 |
0000018661 |
| 005 |
20040930.0 |
| 008 |
040930s2004 |
| 100 |
1 |
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|a ROSMINAZUIN binti Ab Rahim
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| 245 |
1 |
0 |
|a Significance of post oxidation annelaing (POA) and post metallization annealing (PMA) on the capacitance-voltage characterization of Si3N4 MOS capacitor
|c Rosminazuin binti Ab Rahim
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| 260 |
0 |
0 |
|a Bangi :
|b Universiti Kebangsaan Malaysia ,
|c 2004
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| 300 |
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|a xiv,53p. ;
|c 30cm.
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| 500 |
0 |
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|a Thesis(M.Sc in Microelectronics)-UKM,2004
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| 999 |
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|a D000005260
|b THESIS AND DISSERTATIONS
|c REFERENCE
|e Default branch
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